| PART |
Description |
Maker |
| NL10276BC28-05D |
36 cm 14.1 inches, 1024 x 768 pixels, 262,144 colors, LVDS Interface, High luminance
|
NEC[NEC]
|
| NL10276BC28-05D |
36 cm 14.1 inches / 1024 x 768 pixels / 262 /144 colors / LVDS Interface / High luminance
|
NEC
|
| NL10276BC28-05D |
36 cm 14.1 inches, 1024 x 768 pixels, 262,144 colors, LVDS Interface, High luminance 36厘米14.1英寸024 × 768像素62,144色，LVDS接口，高亮度
|
NEC, Corp.
|
| HT10401LHO |
LCD MODULE(1024 × RGB × 768)with AR Coated Glass Optical Bonding
LCD MODULE(1024 隆驴 RGB 隆驴 768)with AR Coated Glass Optical Bonding
|
HYES Optoelectronics, Inc.
|
| TH7887A TH7887AVRH |
Area Array CCD Image Sensor 1024 x 1024 Pixels with Antiblooming
|
Atmel Corp.
|
| TH7888A TH7888ACBHRB TH7888AVRHRB |
From old datasheet system
AREA ARRAY CCD IMAGE SENSOR 1024 X 1024 PIXELS WITH ANTIBLOOMING
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| MU9C1480A MU9C1480A-12DC MU9C1480A-12DI MU9C1480A- |
THE 1024 X 64-BIT LANCAM FACILITATES NUMEROUS 1024 X 64-BIT CMOS CONTENT-ADDRESSABLE MEMORY (CAM)
|
ETC
|
| ADN2850ARU25 ADN2850ARU25-REEL7 ADN2850ACP25-RL7 A |
TERM,RING NON-INSUL. DUAL 250K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 1024 POSITIONS, QCC16
Nonvolatile Memory, Dual 1024 Position Programmable Resistors
Nonvolatile Memory/ Dual 1024 Position Programmable Resistors
|
Analog Devices, Inc.
|
| TH7888AVRH TH7888AVRHRB TH7888A TH7888AVRHN |
Area Array CCD, 1024 x 1024 pixels with Antiblooming, 2 x 20 MHz
AREA ARRAY CCD IMAGE SENSOR 1024 X 1024 PIXELS WITH ANTIBLOOMING
Area Array CCD Image Sensor (1024 x 1024 Pixels with Antiblooming)
|
ATMEL[ATMEL Corporation]
|
| LC87F5164A |
8-Bit Single Chip Microcontroller with 64KB(65535 ×8 bits) FEPROM and 1024 Byte(1024 ×8 bits) RAM On Chip(8位单片微控制器（带片4K5535 ×8 bit）字节闪速EPROM024
|
Sanyo Electric Co.,Ltd.
|
| KT872N15 KT872N55 KT872P51 KT872P55 KT872T55 KT872 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches. Electrical parameter A lead spacing .320 inches. Aperture width in front of sensor .010 inches. Aperture width in front of emitter .
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .320inches. Aperture in front of sensor .050inches. Aperture width in front of emitter
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .01
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .05
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320inches. Aperture in front of sensor .050inches. Aperture in front of emitter .050i
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .320inches. Aperture width in front of sensor .050inches. Aperture in front of emitter
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .0
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .05
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .05
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .01
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05
|
Optek Technology
|
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